M29W002BT Datasheet, PDF (1/20 Pages) STMicroelectronics – 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory

M29W002BT
M29W002BB
2 Mbit (256Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 55ns
s PROGRAMMING TIME
– 10µs by Byte typical
s 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s TEMPORARY BLOCK UNPROTECTION
MODE
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29W002BT: 40h
– Bottom Device Code M29W002BB: C2h
TSOP40 (N)
10 x 20mm
Figure 1. Logic Diagram
VCC
18
A0-A17
8
DQ0-DQ7
W
M29W002BT
E
M29W002BB
RB
G
RP
VSS
AI02955
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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