M29F800DT_06 Datasheet, PDF (1/53 Pages) STMicroelectronics – 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

M29F800DT
M29F800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
5V Supply Flash Memory
Feature summary
■ Supply voltage
– V_CC = 5V ±10% for Program, Erase and
Read
■ Access time: 55, 70, 90ns
■ Programming time
– 10µs per Byte/Word typical
■ 19 Memory Blocks
– 1 Boot Block (Top or Bottom location)
– 2 Parameter and 16 Main Blocks
■ Program/Erase controller
– Embedded Byte/Word Program algorithms
■ Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
■ Unlock Bypass Program command
– Faster Production/batch Programming
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64 bit Security Code
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per Block
■ Electronic Signature
– Manufacturer Code: 0020h
– Top Device Code M29F800DT: 22ECh
– Bottom Device Code M29F800DB: 2258h
SO44 (M)
TSOP48 (N)
12 x 20mm
August 2006
Rev 5
1/53
www.st.com
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