M29F800DT Datasheet, PDF (1/39 Pages) STMicroelectronics – 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

M29F800DT
M29F800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
5V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_CC = 5V ±10% for Program, Erase and Read
s ACCESS TIME: 55, 70, 90ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
s 19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64 bit Security Code
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F800DT: 22ECh
– Bottom Device Code M29F800DB: 2258h
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
February 2003
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