M29F400BT_06 Datasheet, PDF (1/40 Pages) STMicroelectronics – 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory

M29F400BT
M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
single supply Flash memory
Feature summary
■ Single 5 V ± 10% supply voltage for program,
erase and read operations
■ Access time: 45 ns
■ Programming time
– 8 µs per Byte/Word typical
■ 11 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
■ Program/erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
■ Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ Temporary block unprotection mode
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 program/erase cycles per block
■ 20-year data retention
– Defectivity below 1 ppm/year
TSOP48 (N)
12 x 20mm
44
1
SO44 (MT)
■ Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
■ ECOPACK^® packages available
December 2006
Rev 4
1/40
www.st.com
1