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M29F200BT Datasheet, PDF (1/22 Pages) STMicroelectronics – 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory | |||
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M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
â 8µs per Byte/Word typical
s 7 MEMORY BLOCKS
â 1 Boot Block (Top or Bottom Location)
â 2 Parameter and 4 Main Blocks
s PROGRAM/ERASE CONTROLLER
â Embedded Byte/Word Program algorithm
â Embedded Multi-Block/Chip Erase algorithm
â Status Register Polling and Toggle Bits
â Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
â Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
â Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
â Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
â Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
â Manufacturer Code: 0020h
â M29F200BT Device Code: 00D3h
â M29F200BB Device Code: 00D4h
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
Figure 1. Logic Diagram
VCC
17
A0-A16
15
DQ0-DQ14
W
DQ15Aâ1
M29F200BT
E
M29F200BB
BYTE
G
RB
RP
VSS
AI02912
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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