M29F040B Datasheet, PDF (1/21 Pages) STMicroelectronics – 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

M29F040B
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
s SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8 µs per Byte typical
s 8 UNIFORM 64 Kbytes MEMORY BLOCKS
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
PLCC32 (K)
TSOP32 (N)
8 x 20mm
32
1
PDIP32 (P)
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W
M29F040B
E
G
VSS
AI02900
April 2002
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