M29DW640D Datasheet, PDF (1/56 Pages) STMicroelectronics – 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW640D
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase
and Read
– V_PP =12V for Fast Program (optional)
■ ASYNCHRONOUS PAGE READ MODE
– Page Width 4 Words
– Page Access 25, 30ns
– Random Access 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
■ MEMORY BLOCKS
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at both Top and
Bottom)
■ DUAL OPERATIONS
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
■ PROGRAM/ ERASE SUSPEND and
RESUME MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ V_PP/WP PIN for FAST PROGRAM and
WRITE PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201h
December 2004
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