M28W640CT Datasheet, PDF (1/54 Pages) STMicroelectronics – 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_DD = 2.7V to 3.6V Core Power Supply
– V_DDQ= 1.65V to 3.3V for Input/Output
– V_PP = 12V for fast Program (optional)
s ACCESS TIME
– 3.0V to 3.6V: 80ns
– 2.7V to 3.6V: 90ns
s PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
s COMMON FLASH INTERFACE
s MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s SECURITY
– 128 bit user Programmable OTP cells
– 64 bit unique device identifier
– One Parameter Block Permanently Lockable
s AUTOMATIC STAND-BY MODE
s PROGRAM and ERASE SUSPEND
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W640CT: 8848h
– Bottom Device Code, M28W640CB: 8849h
M28W640CT
M28W640CB
64 Mbit (4Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
Figure 1. Packages
FBGA
TFBGA48 (ZB)
8 x 6 ball array
TSOP48 (N)
12 x 20mm
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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