M28W320CT Datasheet, PDF (1/42 Pages) STMicroelectronics – 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

M28W320CT
M28W320CB
32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory
PRELIMINARY DATA
s SUPPLY VOLTAGE
– V_DD = 2.7V to 3.6V: for Program, Erase and
Read
– V_DDQ = 1.65V or 2.7V: Input/Output option
– V_PP = 12V: optional Supply Voltage for fast
Program
s ACCESS TIME
– 2.7V to 3.6V: 90ns
– 2.7V to 3.6V: 100ns
s PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
s PROGRAM/ERASE CONTROLLER (P/E.C.)
s COMMON FLASH INTERFACE
s MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s BLOCK PROTECTION UNPROTECTION
– All Blocks protected at Power Up
– Any combination of blocks can be protected
– WP for block locking
s SECURITY
– 64-bit user Programmable OTP cells
– 64-bit unique device identifier
– One Parameter Block Permanently Lockable
s AUTOMATIC STAND-BY MODE
s PROGRAM and ERASE SUSPEND
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS of DATA RETENTION
– Defectivity below 1ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W320CT: 88BAh
– Bottom Device Code, M28W320CB: 88BBh
TSOP48 (N)
12 x 20mm
µBGA
µBGA47 (GB)
8 x 6 solder balls
Figure 1. Logic Diagram
VDD VDDQ VPP
21
A0-A20
16
DQ0-DQ15
W
E
M28W320CT
G
M28W320CB
RP
WP
VSS
AI03521
May 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/42