M28F201 Datasheet, PDF (1/21 Pages) STMicroelectronics – 2 Mb 256K x 8, Chip Erase FLASH MEMORY

M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
5V ± 10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns
BYTE PROGRAMMING TIME: 10µs typical
ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
– Active Current: 15mA typical
– Stand-by Current: 10µA typical
10,000 PROGRAM/ERASE CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: F4h
PLCC32 (K)
Figure 1. Logic Diagram
TSOP32 (N)
8 x 20 mm
DESCRIPTION
The M28F201 FLASH Memory product is a non-
volatile memories which may be erased electrically
at the chip level and programmed byte-by-byte. It
is organised as 256K bytes. It uses a command
register architecture to select the operating modes
and thus provide a simple microprocessor inter-
face. The M28F201 FLASH Memory product is
suitable for applications where the memory has to
be reprogrammed in the equipment. The access
time of 70ns makes the device suitable for use in
high speed microprocessor systems.
Table 1. Signal Names
A0-A17
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
VPP
Program Supply
V_CC
Supply Voltage
VSS
Ground
VCC VPP
18
A0-A17
8
DQ0-DQ7
W
M28F201
E
G
VSS
AI00637C
April 1997
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