|
M28C256 Datasheet, PDF (1/21 Pages) STMicroelectronics – 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection | |||
|
M28256
256 Kbit (32Kb x8) Parallel EEPROM
with Software Data Protection
FAST ACCESS TIME:
â 90ns at 5V
â 120ns at 3V
SINGLE SUPPLY VOLTAGE:
â 5V ± 10% for M28256
â 2.7V to 3.6V for M28256-xxW
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
â 64 Bytes Page Write Operation
â Byte or Page Write Cycle
ENHANCED END of WRITE DETECTION:
â Data Polling
â Toggle Bit
STATUS REGISTER
HIGH RELIABILITY DOUBLE POLYSILICON,
CMOS TECHNOLOGY:
â Endurance >100,000 Erase/Write Cycles
â Data Retention >10 Years
JEDEC APPROVED BYTEWIDE PIN OUT
ADDRESS and DATA LATCHED ON-CHIP
SOFTWARE DATA PROTECTION
PRELIMINARY DATA
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS)
300 mils
TSOP28 (NS)
8 x13.4mm
Figure 1. Logic Diagram
DESCRIPTION
The M28256 and M28256-Ware 32K x8 low power
Parallel EEPROM fabricatedwith STMicroelectron-
ics proprietary double polysilicon CMOS technol-
ogy.
Table 1. Signal Names
A0-A14
Address Input
DQ0-DQ7 Data Input / Output
W
Write Enable
E
Chip Enable
G
Output Enable
VCC
Supply Voltage
VSS
Ground
VCC
15
A0-A14
8
DQ0-DQ7
W
M28256
E
G
VSS
AI01885
January 1999
This is preliminary information on a new product now in developmentor undergoing evaluation . Detail s are subject to change without notice.
1/21
|
▷ |