M28C16B Datasheet, PDF (1/17 Pages) STMicroelectronics – 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

M28C16B
M28C17B
16 Kbit (2K x 8) Parallel EEPROM
With Software Data Protection
PRELIMINARY DATA
s Fast Access Time: 90 ns at V_CC=5V
s Single Supply Voltage:
– 4.5 V to 5.5 V for M28CxxB
– 2.7 V to 3.6 V for M28CxxB-W
s Low Power Consumption
s Fast BYTE and PAGE WRITE (up to 64 Bytes)
– 3 ms at V_CC=4.5 V
– 5 ms at V_CC=2.7 V
s Enhanced Write Detection and Monitoring:
– Data Polling
– Toggle Bit
– Page Load Timer Status
s JEDEC Approved Bytewide Pin-Out
s Software Data Protection
s 100000 Erase/Write Cycles (minimum)
s Data Retention (minimum): 40 Years
DESCRIPTION
The M28C16B and M28C17B devices consist of
2048x8 bits of low power, parallel EEPROM, fabri-
cated with STMicroelectronics’ proprietary single
polysilicon CMOS technology. The devices offer
fast access time, with low power dissipation, and
require a single voltage supply.
Table 1. Signal Names
A0-A10
Address Input
DQ0-DQ7
Data Input / Output
W
Write Enable
E
Chip Enable
G
Output Enable
RB
Ready/Busy (M28C17B only)
V_CC
Supply Voltage
V_SS
Ground
PLCC32 (K)
Figure 1. Logic Diagram
VCC
11
A0-A10
8
DQ0-DQ7
W
M28C16B
M28C17B
E
RB
G
(M28C17B only)
VSS
AI02816
February 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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