M28C16 Datasheet, PDF (1/18 Pages) STMicroelectronics – 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION

M28C16
16K (2K x 8) PARALLEL EEPROM
with SOFTWARE DATA PROTECTION
FAST ACCESS TIME: 90ns
SINGLE 5V ± 10% SUPPLY VOLTAGE
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
– 64 Bytes Page Write Operation
– Byte or Page Write Cycle: 3ms Max
ENHANCED END OF WRITE DETECTION:
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY:
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
SOFTWARE DATA PROTECTION
M28C16 is replaced by the products
described on the document M28C16A
DESCRIPTION
The M28C16 is a 2K x 8 low power Parallel
EEPROM fabricatedwith SGS-THOMSON proprie-
tary single polysilicon CMOS technology. The de-
vice offers fast access time with low power
dissipation and requires a 5V power supply. The
circuit has been designed to offer a flexible micro-
controller interface featuring both hardware and
software handshaking with Data Polling and Toggle
Bit. The M28C16 supports 64 byte page write op-
eration. A Software Data Protection (SDP) is also
possible using the standard JEDEC algorithm.
Table 1. Signal Names
A0 - A10 Address Input
DQ0 - DQ7 Data Input / Output
W
Write Enable
E
Chip Enable
G
Output Enable
RB
Ready / Busy
V_CC
Supply Voltage
VSS
Ground
NOT FOR NEW DESIGN
24
1
PDIP24 (P)
PLCC32 (K)
24
1
SO24 (MS)
300 mils
TSOP28 (N)
8 x13.4mm
Figure 1. Logic Diagram
VCC
11
A0-A10
8
DQ0-DQ7
W
M28C16
E
RB *
G
VSS
AI01518B
Note: * RB function is offered only with TSOP28 package.
November 1997
This is information on a product still in production bu t not recommended for new de sign.
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