M25PE20_07 Datasheet, PDF (1/60 Pages) STMicroelectronics – 1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

M25PE20
M25PE10
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories
with Byte-Alterability, 50 MHz SPI bus, standard pinout
Features
■ 1 or 2 Mbit of Page-Erasable Flash memory
■ 2.7 V to 3.6 V single supply voltage
■ SPI bus compatible serial interface
■ 50 MHz clock rate (maximum)
■ Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
■ SubSector Erase (32 Kbits)
■ Sector Erase (512 Kbits)
■ Bulk Erase (1 Mbit for the M25PE10, 2 Mbits for
the M25PE20)
■ Deep Power-down mode 1µA (typical)
■ Electronic Signature
– JEDEC Standard Two-Byte Signature
(8012h for M25PE20
8011h for M25PE10)
■ Software Write Protection on a 64 Kbyte sector
basis
■ More than 100 000 Write cycles
■ More than 20 year data retention
■ Hardware Write Protection of the memory area
selected using the BP0 and BP1 bits
■ Package
– ECOPACK® (RoHS compliant)
SO8N (MN)
150 mil width
VFQFPN8 (MP)
6 × 5 mm
January 2007
Rev 3
1/60
www.st.com
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