LET9180 Datasheet, PDF (1/10 Pages) STMicroelectronics – Excellent thermal stability

LET9180
180 W, 32 V Wideband LDMOS transistor
M246
Epoxy sealed
Figure 1. Pin connection
1
2
Datasheet - target specification
Features
• Excellent thermal stability
• Common source configuration push-pull
• P_OUT = 180 W with 19 dB gain @ 860 MHz
• BeO-free package
Description
The LET9180 is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 2
GHz.
5
1-2 Drain
4-5 Gate
4
3 Source
Order code
LET9180
Table 1. Device summary
Packaging
M246
Branding
LET9180
May 2013
DocID024706 Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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