LET9150 Datasheet, PDF (1/12 Pages) STMicroelectronics – RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

LET9150
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ P_OUT = 150 W with 20 dB gain @ 860 MHz
■ BeO-free package
Description
The LET9150 is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 2
GHz.
M246
Epoxy sealed
Figure 1. Pin connection
1
2
5
1-2 Drain
4-5 Gate
4
3 Source
Table 1.
Device summary
Order code
LET9150
Package
M246
December 2010
Doc ID 16369 Rev 6
Branding
LET9150
1/12
www.st.com
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