LET9130 Datasheet, PDF (1/6 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-95 CDMA: 865-895 MHz / 28 V
P_OUT = 25 W
EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
P_OUT = 45 W
EFF. = 38 %
• GSM: 920-960 MHz / 28 V
P_OUT = 135 W
EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
LET9130
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
M265
epoxy sealed
ORDER CODE
LET9130
BRANDING
LET9130
PIN CONNECTION
1
DESCRIPTION
The LET9130 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET9130 is designed for high gain and
broadband performance operating in common
source mode at 28 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70 °C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
2
3
1. Drain
2. Source
3. Gate
Value
Unit
65
V
-0.5 to +15
V
15
A
217
W
200
°C
-65 to +200
°C
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
0.6
°C/W
February, 6 2003
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