LET9085 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
LET9085
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
• IS-95 CDMA PERFORMANCES
P_OUT = 20 W
EFF. = 28 %
• EDGE PERFORMANCES
P_OUT = 35 W
EFF. = 35 %
• GSM PERFORMANCES
P_OUT = 75 W
EFF. = 55 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET9085 is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET9085 is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
M265
epoxy sealed
ORDER CODE
LET9085
BRANDING
LET9085
PIN CONNECTION
1
2
3
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70 °C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
Value
Unit
65
V
-0.5 to +15
V
12
A
186
W
200
°C
-65 to +150
°C
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
0.7
°C/W
January, 28 2003
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