LET9070CB Datasheet, PDF (1/14 Pages) STMicroelectronics – Excellent thermal stability

LET9070CB
RF power transistor from the LdmoST family
of N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
M243
epoxy sealed
Features
• Excellent thermal stability
• Common source configuration
• P_OUT (@ 28 V)= 70 W with 17 dB gain @ 945
MHz
• BeO free package
• In compliance with the 2002/95/EC European
directive
• Bidirectional ESD
Figure 1. Pin out
1
3
Description
The LET9070CB is a common source N-channel
enhancement mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The LET9070CB is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
1. Drain
2. Gate
2
3. Source
Order code
LET9070CB
Table 1. Device summary
Package
M243
July 2013
This is information on a product in full production.
DocID023782 Rev 2
Branding
LET9070CB
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www.st.com
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