LET9060S Datasheet, PDF (1/10 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9060S
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 60 W with 17 dB gain @ 945 MHz / 26V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
DESCRIPTION
The LET9060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9060S’s
superior linearity performance makes it an ideal
solution for base station applications.
PowerSO-10RF
(straight lead)
ORDER CODE
LET9060S
BRANDING
LET9060S
PIN CONNECTION
SOURCE
GATE
DRAIN
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 °C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
March, 25 2003
Value
65
-0.5 to +15
7
170
165
-65 to +150
0.7
Unit
V
V
A
W
°C
°C
°C/W
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