LET9060F Datasheet, PDF (1/9 Pages) STMicroelectronics – Excellent thermal stability

LET9060F
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT (@ 28 V)= 60 W with 18 dB gain @ 945
MHz
■ P_OUT (@ 36 V)= 90 W with 18 dB gain @ 945
MHz
■ BeO free package
■ In compliance with the 2002/95/EC european
directive
Description
The LET9060F is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The LET9060F is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
M250
epoxy sealed
Figure 1. Pin out
1
3
1. Drain
2. Gate
2
3. Source
Table 1. Device summary
Order code
LET9060F
Package
M250
Branding
LET9060F
April 2011
Doc ID 16863 Rev 3
1/9
www.st.com
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