LET9060C Datasheet, PDF (1/5 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 60 W WITH 17.3 dB gain @ 945 MHz
• BeO FREE PACKAGE
• HIGH GAIN
• ESD PROTECTION
DESCRIPTION
The LET9060C is an N-Channel enhancement-mode
lateral Field-Effect RF power transistor, designed for
high gain broadband, commercial and industrial
applications. It operates at 28 V in common source
mode at frequencies up to 1.0 GHz. LET9060C
boasts the excellent gain, linearity and reliability of the
ST latest LDMOS technology. Its superior
performances make it an ideal solution for base
station applications.
M243
epoxy sealed
ORDER CODE
LET9060C
BRANDING
LET9060C
PIN CONNECTION
1
3
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
November, 4 2002
1. Drain
2. Gate
2
3. Source
Value
Unit
65
V
-0.5 to +15
V
7
A
118
W
200
°C
-65 to +150
°C
1.1
°C/W
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