LET9060 Datasheet, PDF (1/11 Pages) STMicroelectronics – Excellent thermal stability

LET9060
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 60 W with 17.2 dB gain @ 960 MHz /
28 V
■ New RF plastic package
Description
The LET9060 is a common source N-channel,
enhancement-mode lateral field-effect RF power
MOSFET. It is designed for high gain, broadband,
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. LET9060 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
LET9060’s superior linearity performance makes
it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order codes
Packages
LET9060
LET9060S
LET9060TR
LET9060STR
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Marking
LET9060
LET9060S
LET9060
LET9060S
Packaging
Tube
Tube
Tape and reel
Tape and reel
February 2011
Doc ID 010019 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
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