LET9045 Datasheet, PDF (1/12 Pages) STMicroelectronics – Excellent thermal stability

LET9045
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 45 W with 18.5 dB gain @ 960 MHz /
28 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
PowerSO-10RF
(formed lead)
Description
The LET9045 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applicatios. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. LET9045 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9045’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order codes
LET9045
LET9045S
LET9045TR
LET9045STR
Packages
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packaging
Tube
Tube
Tape and reel
Tape and reel
April 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice
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