LET8180 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
LET8180
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION,
PUSH-PULL
• P_OUT = 220 W with 17 dB TYP. gain @ 860 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET8180 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET8180 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
M252
epoxy sealed
ORDER CODE
LET8180
BRANDING
LET8180
PIN CONNECTION
1
2
3
5
4
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc =+70 °C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
Value
65
-0.5 to +15
18
289
200
-65 to +150
0.45
Unit
V
V
A
W
°C
°C
°C/W
January, 28 2003
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