LET21030C Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

Designed for GSM / EDGE / IS-97 / WCDMA
applications
LET21030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
• EXCELLENT THERMAL STABILITY
• P_OUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET21030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.1
GHz. The LET21030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
CASE 465E–03, STYLE 1
epoxy sealed
ORDER CODE
LET21030C
BRANDING
LET21030C
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70 °C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
January, 24 2003
Value
65
-0.5 to +15
4
65
200
-65 to +200
2
Unit
V
V
A
W
°C
°C
°C/W
1/4