LET21008 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET21008
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 8 W with 11 dB gain @ 2170 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
DESCRIPTION
The LET21008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
LET21008’s superior linearity performance makes
it an ideal solution for base station applica-
tions.
PowerFLAT™(5x5)
ORDER CODE
LET21008
BRANDING
21008
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
April, 15 2003
Value
65
-0.5 to +15
2.0
TBD
150
-65 to +150
TBD
Unit
V
V
A
W
°C
°C
°C/W
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