LET20045C Datasheet, PDF (1/9 Pages) STMicroelectronics – Excellent thermal stability

LET20045C
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT (@ 28 V)= 54 W with 13.3 dB gain @
2000 MHz
■ P_OUT (@ 36 V)= 65 W with 12.5 dB gain @
2000 MHz
■ BeO free package
■ In compliance with the 2002/95/EC European
directive
Description
The LET20045C is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
2.0 GHz. The LET20045C is designed for high
gain and broadband performance operating in
common source mode at 36 V. It is ideal for base
station applications requiring high linearity.
M243
epoxy sealed
Figure 1. Pin out
1. Drain
2. Gate
1
3
2
3. Source
Table 1. Device summary
Order code
LET20045C
Package
M243
Branding
LET20045C
July 2011
Doc ID 022024 Rev 1
1/9
www.st.com
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