LET20030C Datasheet, PDF (1/5 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

Designed for GSM / EDGE / IS-97 applications
LET20030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
• IS-97 CDMA PERFORMANCES
P_OUT = 4.5 W
EFF. = 17 %
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
DESCRIPTION
The LET20030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The LET20030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. It is ideal for base station
applications requiring high linearity.
M243
epoxy sealed
ORDER CODE
LET20030C
BRANDING
LET20030C
PIN CONNECTION
1
3
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS = 1 MΩ)
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS
Power Dissipation (@ Tc = 70 ^°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA (T_CASE = 70 ^°C)
R_th(j-c) Junction -Case Thermal Resistance
January, 24 2003
1. Drain
2. Gate
2
3. Source
Value
65
65
-0.5 to +15
4
65
200
-65 to +200
2.0
Unit
V
V
V
A
W
°C
°C
°C/W
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