LET19060C Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-97 CDMA PERFORMANCES
P_OUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
P_OUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
P_OUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
LET19060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M265
epoxy sealed
ORDER CODE
LET19060C
BRANDING
LET19060C
PIN CONNECTION
1
2
3
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70 °C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
Value
65
-0.5 to +15
7
130
200
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
January, 24 2003
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