LET16060C Datasheet, PDF (1/9 Pages) STMicroelectronics – Excellent thermal stability

LET16060C
RF power transistor from the LdmoST family
of N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
M243
epoxy sealed
Figure 1. Pin out
1
3
Features
• Excellent thermal stability
• Common source configuration
• P_OUT (@ 28 V)= 60 W with 13.8 dB gain @
1600 MHz
• BeO free package
• In compliance with the 2002/95/EC European
directive
Description
The LET16060C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.6 GHz. The LET16060C is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for
INMARSAT satellite communications.
1. Drain
2. Gate
2
3. Source
Order code
LET16060C
Table 1. Device summary
Package
M243
Branding
LET16060C
April 2014
This is information on a product in full production.
DocID022249 Rev 3
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