L6571BD013TR Datasheet, PDF (1/12 Pages) STMicroelectronics – High voltage half bridge driver with oscillator

L6571
High voltage half bridge driver with oscillator
Features
■ High voltage rail up to 600 V
■ BCD off line technology
■ 15.6 V Zener clamp on Vs
■ Driver current capability:
– Sink current = 270 mA
– Source current = 170 mA
■ Very low start up current: 150 mA
■ Undervoltage lockout with hysteresis
■ Programmable oscillator frequency
■ Dead time 1.25 μs (L6571A) or 0.72 μs
(L6571B)
■ dV/dt immunity up to ±50 V/ns
■ ESD protection
Description
DIP-8
SO8
can be programmed using external resistor and
capacitor.
The internal circuitry of the device allows it to be
driven also by external logic signal.
The output drivers are designed to drive external
nchannel power MOSFET and IGBT. The internal
logic assures a dead time to avoid cross-
conduction of the power devices.
Two version are available: L6571A and L6571B.
They differ in the internal dead time: 1.25μs and
0.72 μs (typ.)
The device is a high voltage half bridge driver with
built in oscillator. The frequency of the oscillator
Figure 1. Block diagram
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Doc ID 4946 Rev 6
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