L6387E Datasheet, PDF (1/15 Pages) STMicroelectronics – High-voltage high and low side driver

L6387E
High-voltage high and low side driver
Features
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature
range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF
load
■ CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
■ Internal bootstrap diode
■ Outputs in phase with inputs
■ Interlocking function
DIP-8
SO-8
Description
The L6387E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has a Driver structure that enables
to drive independent referenced N Channel Power
MOS or IGBT. The high side (Floating) Section is
enabled to work with voltage Rail up to 600V. The
Logic Inputs are CMOS/TTL compatible for ease
of interfacing with controlling devices.
Figure 1. Block diagram
BOOTSTRAP DRIVER
V_{CC 3}
UV
DETECTION
2
HIN
1
LIN
LOGIC
LEVEL
SHIFTER
8 Vboot
H.V.
HVG
DRIVER
HVG
R
7
S
OUT
6
V_CC
5 LVG
LVG
DRIVER
4 GND
Cboot
TO LOAD
D00IN1135
October 2007
Rev 1
1/15
www.st.com
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