L6386E Datasheet, PDF (1/18 Pages) STMicroelectronics – High-voltage high and low side driver

L6386E
High-voltage high and low side driver
Features
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature
range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF
load
■ CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
■ Under voltage lock out on lower and upper
driving section
■ Integrated bootstrap diode
■ Outputs in phase with inputs
DIP-14
SO-14
Description
The L6386E is an high-voltage device,
manufactured with the BCD "OFF-LINE"
technology. It has a Driver structure that enables
to drive independent referenced Channel Power
MOS or IGBT. The High Side (Floating) Section is
enabled to work with voltage Rail up to 600V. The
Logic Inputs are CMOS/TTL compatible for ease
of interfacing with controlling devices.
Figure 1. Block diagram
BOOTSTRAP DRIVER
V_CC
UV
4 ^DETECTION
3
HIN
2
SD
UV
DETECTION
LOGIC
LEVEL
SHIFTER
1
LIN
SGND
7
VREF
14
HVG
R
DRIVER
R
13
S
12
V_CC
9
LVG
DRIVER
8
-
5
+
Vboot
H.V.
HVG
C_BOOT
OUT
LVG
TO LOAD
PGND
DIAG
6 CIN
October 2007
Rev 1
D97IN520D
1/18
www.st.com
18