L6385E Datasheet, PDF (1/16 Pages) STMicroelectronics – High-voltage high and low side driver

L6385E
High-voltage high and low side driver
Features
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature
range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF
load
■ CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
■ Under voltage lock out on lower and upper
driving section
■ Internal bootstrap diode
■ Outputs in phase with inputs
DIP-8
SO-8
Description
The L6385E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has an Half - Bridge Driver structure
that enables to drive independent referenced N
Channel Power MOS or IGBT. The High Side
(Floating) Section is enabled to work with voltage
Rail up to 600V. The Logic Inputs are CMOS/TTL
compatible for ease of interfacing with controlling
devices.
Figure 1. Block diagram
BOOTSTRAP DRIVER
V_{CC 3}
UV
DETECTION
2
HIN
1
LIN
UV
DETECTION
LOGIC
LEVEL
SHIFTER
8 Vboot
H.V.
HVG
R
DRIVER
HVG
R
7
S
OUT
6
V_CC
5 LVG
LVG
DRIVER
4 GND
Cboot
TO LOAD
D97IN514B
October 2007
Rev 1
1/16
www.st.com
16