L3100B Datasheet, PDF (1/8 Pages) STMicroelectronics – OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE

L3100B
L3100B1
®
Application Specific Discretes
A.S.D.™
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
FEATURES
UNIDIRECTIONAL FUNCTION
PROGRAMMABLE BREAKDOWN VOLTAGE
UP TO 265 V
PROGRAMMABLE CURRENT LIMITATION
FROM 50 mA TO 550 mA
HIGH SURGE CURRENT CAPABILITY
IPP = 100A 10/1000 µs
DESCRIPTION
Dedicated to sensitive telecom equipment
protection, this device can provide both voltage
protection and current limitation with a very tight
tolerance.
Its high surge current capability makes the L3100B
a reliable protection device for very exposed
equipment, or when series resistors are very low.
The breakdown voltage can be easily programmed
by using an external zener diode.
A multiple protection mode can also be performed
when using several zener diodes, providing each
line interface with an optimized protection level.
The current limiting function is achieved with the
use of a resistor between the gate N and the
cathode. The value of the resistor will determine
the level of the desired current.
DIL 8
SCHEMATIC DIAGRAM
Anode
Gate N
Gate P
Cathode
COMPLIESWITH THE FOLLOWING STANDARDS :
CCITT K17 - K20 10/700 µs 1.5 kV
CONNECTION DIAGRAM
5/310 µs 38 A
VDE 0433
10/700 µs 2 kV
5/200 µs 50 A
Gate N 1
8
Anode
CNET
0.5/700 µs 1.5 kV
0.2/310 µs 38 A
NC 2
7
Anode
Gate P ³
Cathode ⁴
6
Anode
5
Anode
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
September 1998 Ed : 3A
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