IRFP450 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET

®
IRFP450
N - CHANNEL 500V - 0.33Ω - 14A - TO-247
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
IRFP450
500 V < 0.4 Ω
14 A
s TYPICAL R_DS(on) = 0.33 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
V_GS Gat e-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
I_DM ( •)
P_tot
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Uni t
500
V
500
V
± 20
V
14
A
8.7
A
56
A
190
W
1.5
W/^oC
3.5
-65 to 150
150
(1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
o_C
o_C
August 1998
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