IRF740 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

®
IRF740
N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
IRF740
400 V < 0.55 Ω 10 A
s TYPICAL RDS(on) = 0.48 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
Value
V _DS
V _DGR
V_GS
I_D
I_D
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
400
400
± 20
10
6.3
I_DM (•) Drain Current (pulsed)
40
P_tot Total Dissipation at T_c = 25 ^oC
125
Derating Factor
1.0
dv/dt(1) Peak Diode Recovery voltage slope
4.0
T_stg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD ≤10 A, di/dt ≤120 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
o_C
o_C
October 1998
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