IRF730 Datasheet, PDF (1/8 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

®
IRF730
N - CHANNEL 400V - 0.75 Ω - 5.5A - TO-220
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
IRF730
400 V
<1Ω
5.5 A
s TYPICAL R_DS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
400
V_DGR
V_GS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
400
± 20
5.5
3.5
I_DM(•) Drain Current (pulsed)
22
P_tot Tot al Dissipation at T_c = 25 ^oC
100
Derating Factor
0.8
dv/dt(1) Peak Diode Recovery voltage slope
4.0
T_stg Storage Temperature
-65 to 150
T_j
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤5.5 A, di/dt ≤ 90 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
o_C
o_C
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