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IRF640S Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET | |||
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IRF640S
N - CHANNEL 200V - 0.150⦠- 18A TO-263
MESH OVERLAY⢠MOSFET
TYPE
VDSS
RDS(on)
ID
IRF640S
200 V < 0.18 ⦠18 A
s TYPICAL RDS(on) = 0.150 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
companyâs consolidated strip layout-based MESH
OVERLAY⢠process. This technology matches
and improves the performances compared with
standard parts from various sources.
3
1
D2PAK
TO-263
(suffix âT4â)
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kâ¦)
VGS
ID
ID
IDM (â¢)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
Va l u e
Un it
200
V
200
V
± 20
V
18
A
11
A
72
A
125
W
1.0
W /o C
5
-65 to 150
150
( 1) ISD ⤠18A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
V/ns
oC
oC
September 1999
1/8
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