IRF630M_06 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET

IRF630M
IRF630MFP
N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP
Mesh Overlay™ Power MOSFET
General features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
IRF630M
IRF630MFP
200 V
200 V
< 0.40 Ω 9 A
< 0.40 Ω 9 A
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized
Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources. Isolated TO-
220 option simplifies assembly and cuts risk of
accidental short circuit in crowded monitor PCB’s.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
IRF630M
IRF630MFP
Marking
IRF630M
IRF630MFP
Package
TO-220
TO-220FP
Packaging
Tube
Tube
June 2006
Rev 2
1/14
www.st.com
14