IRF630M Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
IRF630M
200 V < 0.40 Ω
9A
IRF630FPM
200 V < 0.40 Ω
9A
s TYPICAL R_DS(on) = 0.35 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY™ process. This technology matches and
improves the performances compared with standard
parts from various sources.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
.APPLICATIONS
s MONITOR DISPLAYS
s GENERAL PURPOSE SWITCH
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
V_ISO
Insulation Winthstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
October 2001
Value
IRF630M
IRF630MFP
200
200
± 20
9
9 (**)
5.7
5.7 (**)
36
36
75
30
0.6
0.24
5
5
--
2500
–65 to 150
150
(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
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