IRF630 Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF630
®
IRF630FP
N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP
MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
IRF630
IR F630F P
200 V < 0.40 Ω
9A
200 V < 0.40 Ω
9A
s TYPICAL RDS(on) = 0.35 Ω
s EXTREMELY HIGH dV/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
3
2
1
TO-220
3
2
1
TO-220FP
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
Va l u e
IRF630
IR F630F P
V_DS Drain-source Voltage (V_GS = 0)
200
V _DGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
200
± 20
9
9( **)
5.7
5 .7 ( ** )
IDM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
36
36
75
25
0.6
0.20
dv/dt(1) Peak Diode Recovery voltage slope
5
5
V_ISO I nsulation W ithstand Voltage (DC)

2000
T_stg Storage Temperature
-65 to 150
T_j
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD ≤ 9A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed
February 1999
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
V
o_C
o_C
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