IRF540_03 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET

IRF540
N-CHANNEL 100V - 0.055 Ω - 22A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
IRF540
100 V <0.077 Ω 22 A
s TYPICAL R_DS(on) = 0.055Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
Ordering Information
IRF540
SALES TYPE
MARKING
IRF540&
PACKAGE
TO-220
PACKAGING
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
100
100
± 20
22
15
88
85
0.57
9
220
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting T_j = 25 ^oC, I_D = 12A, V_DD = 30V
February 2003
1/8
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &