IRF540 Datasheet, PDF (1/6 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF540
IRF540FI
N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI
POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
IRF540
I RF5 40F I
100 V < 0.077 Ω
100 V < 0.077 Ω
30 A
16 A
s TYPICAL RDS(on) = 0.050 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
3
2
1
TO-220
3
2
1
TO-220FI
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
ID
IDM ( •)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
Viso Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
IRF530
IRF 530 FI
100
100
± 20
30
17
21
12
120
120
150
45
1
0.3
-
2000
-65 to 175
175
(1) ISD ≤30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
April 1998
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