IRF530FP Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

IRF530FP
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
IRF530FP
VDSS
100 V
RDS(on)
< 0.16 Ω
ID
10 A
s TYPICAL RDS(on) = 0.12 Ω
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s AVALANCHE RUGGED TECHNOLOGY
s APPLICATION ORIENTED
CHARACTERIZATION
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS, Etc)
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
Value
100
100
± 20
10
7
64
35
0.23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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