FW26025A1 Datasheet, PDF (1/4 Pages) STMicroelectronics – PNP POWER DARLINGTON TRANSISTOR

®
FW26025A1
PNP POWER DARLINGTON TRANSISTOR
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The FW26025A1 is a silicon Epitaxial-Base PNP
power transistor in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
It is inteded for general purpose amplifier and low
frequency switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at T_c ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
November 2003
R1 Typ. = 8 KΩ
R2 Typ. = 60 Ω
Value
100
100
5
20
40
0.5
160
-65 to 200
200
Unit
V
V
V
A
A
A
W
o_C
o_C
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