FERD40U50C Datasheet, PDF (1/8 Pages) STMicroelectronics – Reduced leakage current

FERD40U50C
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Features
• ST advanced rectifier process
• Stable leakage current over reverse voltage
• Reduced leakage current
• Low forward voltage drop
• High frequency operation
• Insulated package: TO-220FPAB
– Insulating voltage: 2000 V_RMS sine
Field effect rectifier
Datasheet - production data
Description
This dual rectifier is based on a proprietary
technology that achieved the best in class V_F/I_R
for a given silicon surface.
Packaged in TO-220FPAB, this device is intended
to be used in rectification and freewheeling
operations in switch-mode power supplies.
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
T_j (max)
V_F(typ)
2 x 20 A
50 V
+175 °C
0.43 V
June 2015
This is information on a product in full production.
DocID027943 Rev 1
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