FERD20H100S Datasheet, PDF (1/15 Pages) STMicroelectronics – 100 V field-effect rectifier diode

FERD20H100S
100 V field-effect rectifier diode
Datasheet - production data
A
K
A
A
K
A
TO-220AB
K
K
A
KA
IPAK
A
K
A
TO-220FPAB
K
KA
A
DPAK
Features
 ST advanced rectifier process
 Stable leakage current over reverse voltage
 Reduced leakage current
 Low forward voltage drop
 High frequency operation
 Insulated package TO-220FPAB :
 Insulated voltage : 2000 VRMS sine
Description
The device is based on a proprietary technology
that achieves the best in class VF/IR trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined applications
where both efficiency and thermal performance
are key. With a lower dependency of leakage
current (IR) and forward voltage (VF) in function of
temperature, the thermal runaway risk is reduced.
It is highly recommended to be used in adapters
and chargers.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
VF (max.)
IR (max.)
Tj (max.)
20 A
100 V
0.415 V
140 µA
175 °C
May 2016
DocID029022 Rev 2
This is information on a product in full production.
1/15
www.st.com