EVAL6491HB Datasheet, PDF (1/7 Pages) STMicroelectronics – Smart shutdown function

EVAL6491HB
Demonstration board for L6491 gate driver with smartSD
Features
 High voltage rail up to 600 V
 dV/dt immunity: 50 V/ns in full temperature
range
 Driver current capability: 4 A source/sink
 Comparator for fault protections
 Smart shutdown function
 Integrated bootstrap diode
 Adjustable deadtime
 Interlocking function
 Switching times 15 ns rise/fall with 1 nF load
 3.3 V, 5 V TTL/CMOS inputs with hysteresis
 Compact and simplified layout
 Bill of material reduction
 Effective fault protection
 Flexible, easy and fast design
Data brief
Description
The L6491 is a high voltage device manufactured
with the BCD6 “OFF-LINE” technology. It is
a single-chip half-bridge gate driver for N-channel
power MOSFETs or IGBTs, with a 4 A sink and
source current capability.
The high-side (floating) section is designed to
stand a voltage rail up to 600 V. The logic inputs
are CMOS/TTL compatible down to 3.3 V for easy
interfacing a microcontroller or DSP.
An integrated comparator is available for fast
overcurrent protection, and is also suited for other
functions such overtemperature, etc.
The EVAL6491HB board allows evaluating all of
the L6491 features while driving a power switch
with voltage rating up to 600 V in TO-220 or
TO-247 packages.
The board allows easily selecting and modifying
the values of relevant external components in
order to ease driver's performance evaluation
under different applicative conditions and fine pre-
tuning of final application's components.
April 2015
DocID027733 Rev 1
For further information contact your local STMicroelectronics sales office.
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